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    ZHENG Tingan, GU Minchao, SUN Fangcheng, CHEN Yu. Synthesis of Black Phosphorus Nanosheets Covalently Modified with Poly(N-vinylcarbazole) and Its Application in Stacked Resistive Random Access Memory Devices[J]. Journal of Functional Polymers, 2023, 36(1): 31-41. doi: 10.14133/j.cnki.1008-9357.20220919001
    Citation: ZHENG Tingan, GU Minchao, SUN Fangcheng, CHEN Yu. Synthesis of Black Phosphorus Nanosheets Covalently Modified with Poly(N-vinylcarbazole) and Its Application in Stacked Resistive Random Access Memory Devices[J]. Journal of Functional Polymers, 2023, 36(1): 31-41. doi: 10.14133/j.cnki.1008-9357.20220919001

    Synthesis of Black Phosphorus Nanosheets Covalently Modified with Poly(N-vinylcarbazole) and Its Application in Stacked Resistive Random Access Memory Devices

    • One of the most effective methods for improving the storage density of resistive random access memories (RRAMs) is to fabricate 3D vertical stacking devices. By using BP-DDAT(DDAT: S-1-dodecyl-S′-(α,α′-dimethyl-α′ ′-aceticacid)trithiocarbonate) as a key 2D template and reversible addition-fragmentation chain transfer (RAFT) reagent, a novel poly(N-vinylcarbazole) covalently functionalized black phosphorus derivative (BP-PVK) is successfully synthesized and well-characterized by infrared spectroscopy, X-ray electron spectroscopy and UV-Vis absorption spectroscopy. The environmental stability and solubility of BP nanosheets are greatly improved. Using BP-PVK as active layer, a double-layer vertically stacked RRAM memory device (17×17 stripe array) with a configuration of Al/BP-PVK/Al/BP-PVK/Al is fabricated. The as-fabricated device shows good bistable electrical switching and non-volatile rewritable performance at room temperature, with an ON/OFF current ratio exceeding 103, higher production yield of the memory devices and structural uniformity.
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