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    李建高, 李晶, 高希珂. 基于硫杂萘二酰亚胺的席夫碱型聚合物电子传输材料[J]. 功能高分子学报, 2020, 33(2): 148-156. doi: 10.14133/j.cnki.1008-9357.20190523001
    引用本文: 李建高, 李晶, 高希珂. 基于硫杂萘二酰亚胺的席夫碱型聚合物电子传输材料[J]. 功能高分子学报, 2020, 33(2): 148-156. doi: 10.14133/j.cnki.1008-9357.20190523001
    LI Jiangao, LI Jing, GAO Xike. Schiff-Base Type Polymeric Electronic Transport Material Based on S-Heterocycles Fused Naphthalene Diimides[J]. Journal of Functional Polymers, 2020, 33(2): 148-156. doi: 10.14133/j.cnki.1008-9357.20190523001
    Citation: LI Jiangao, LI Jing, GAO Xike. Schiff-Base Type Polymeric Electronic Transport Material Based on S-Heterocycles Fused Naphthalene Diimides[J]. Journal of Functional Polymers, 2020, 33(2): 148-156. doi: 10.14133/j.cnki.1008-9357.20190523001

    基于硫杂萘二酰亚胺的席夫碱型聚合物电子传输材料

    Schiff-Base Type Polymeric Electronic Transport Material Based on S-Heterocycles Fused Naphthalene Diimides

    • 摘要: 将苯甲醛基团引入到硫杂萘二酰亚胺共轭骨架中,与不同共轭程度和刚性的芳香二胺进行缩合反应,构筑了一类基于硫杂萘二酰亚胺的席夫碱型聚合物 P1P2P3 。采用紫外-可见吸收光谱(UV-Vis)、循环伏安等研究了材料的基本物理化学性质。这类聚合物具有良好的成膜性和较低的最低未占分子轨道能级(−4.07~−4.19 eV)。聚合物 P3 含有刚性萘单元,其UV-Vis的最大吸收波长(λmax)为754 nm,比 P1P2 分别红移了约76 nm和75 nm。X射线衍射(XRD)表明,聚合物 P1、P2、P3 的薄膜均呈现无定形的特征。以溶液甩膜法制备了此类聚合物的有机场效应晶体管(OFET)器件,其中聚合物 P3 的薄膜经300 ℃热退火,其OFET器件的电子迁移率可达2.47×10−3 cm2/(V·s),开关比为105,表明聚合物 P3 是一种可耐高温处理的n-型半导体材料。在聚合物共轭骨架中引入刚性的结构单元,可以有效调控吸收光谱、能级结构和薄膜形貌,进而提升OFET器件性能。

       

      Abstract: A library of π-conjugated systems have been developed through conventional tools of coupling (e.g. Suzuki coupling, Stille coupling) and have been used for the fabrication of organic optoelectronic devices. Herein, a facile, atom-efficient and environmentally benign pathway is outlined, with water as the only by-product, for the synthesis of conjugated Schiff-based copolymers based on sulfur-heterocycle fused naphthalene diimides (NDIs) and aromatic diamines. These copolymers showed broad absorption spectra in the ultraviolet-visible (UV-Vis) region and low-lying LUMO levels at about −4.07—−4.19 eV. The relationship between the chemical structure and the performance, including the optical properties, electrochemical properties, thermal stability, morphologies and the field-effect performance in transistors, is fully studied using these polymers as active layer. Compared with P1 and P2 , P3 exhibits an absorption peak at 754 nm, with red shifts of 76 nm and 75 nm, respectively. An electron mobility of up to 2.47×10−3 cm2/ (V·s) can be achieved for P3 -based transistors after performing a thermal annealing process at 300 ℃. The incorporation of rigid structure units into polymer conjugated skeleton can effectively tune its spectral absorption, energy level structure as well as the film morphology, thus improving the device performance.

       

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