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    共价有机框架在阻变存储中的应用研究进展

    Recent Advances in the Application of Covalent Organic Frameworks in Resistive Switching Memory

    • 摘要: 从分子尺度到宏观尺度设计空间与结构特征,是近年来材料科学中备受关注的最重要课题之一。共价有机框架(COFs)材料是一类通过共价键连接形成的二维或三维的网状结构晶态多孔材料,具有高比表面积、规整孔道结构、明确的结构可设计性和优异稳定性, 其可调化学结构和高度结晶性有望为提升阻变性能均匀性、器件稳定性、电阻连续调变及低功耗柔性边缘计算提供潜在的解决方案。本文系统地综述了近年来COFs材料在结构、器件制备及其性能研究等方面的进展,探讨了存在的亟待解决的关键科学问题和未来的发展方向。可以预期,随着COFs材料在大面积高质量薄膜制备、阻变机制直接表征、器件阵列集成三个方向的技术突破,有望成为从实验室前沿材料走向下一代非易失存储与神经形态计算的核心候选体系,整体发展前景十分广阔。

       

      Abstract: Designing spatial and structural features from the molecular to macroscopic scale has become one of the most important topics in materials science in recent years. Covalent organic frameworks (COFs) are a class of crystalline porous materials composed of two- or three-dimensional network structures connected by covalent bonds. These materials exhibit high specific surface area, well-defined pore channels, clear structural designability, and excellent stability. Its tunable chemical structure and high crystallinity are expected to provide potential solutions for improving the uniformity of resistance change performance, device stability, continuous resistance variation and low-power flexible edge computing. This article reviews the recent progress of COFs materials in terms of structure, device fabrication, and performance research. It also discusses the key scientific issues that need to be addressed urgently and the future development directions. It is expected that, with technological breakthroughs in three areas—large-area high-quality film fabrication, direct characterization of resistive switching mechanisms, and integration of device arrays, COFs-based materials will emerge as a leading candidate for transitioning from cutting-edge laboratory materials to next-generation nonvolatile memory and neuromorphic computing. The overall development prospects would be very broad.

       

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