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    佟拉嘎, 荣华, 林世静, 任明慧. 一维取代聚噻吩的电子性能[J]. 功能高分子学报, 2009, 22(1): 38-44.
    引用本文: 佟拉嘎, 荣华, 林世静, 任明慧. 一维取代聚噻吩的电子性能[J]. 功能高分子学报, 2009, 22(1): 38-44.
    Electrical Properties of Alkyl and Alkoxyl Substituted One Dimensional Polythiophene[J]. Journal of Functional Polymers, 2009, 22(1): 38-44.
    Citation: Electrical Properties of Alkyl and Alkoxyl Substituted One Dimensional Polythiophene[J]. Journal of Functional Polymers, 2009, 22(1): 38-44.

    一维取代聚噻吩的电子性能

    Electrical Properties of Alkyl and Alkoxyl Substituted One Dimensional Polythiophene

    • 摘要: 报道了3种取代聚噻吩,3-己基聚噻吩(P3HT)、3,4-二戊基聚噻吩(P34PT)、3-辛氧基聚噻吩(P3OOT)的合成方法、1H-NMR测试结果及UV-Vis吸收光谱和荧光光谱分析结果。用密度泛函方法计算了无取代噻吩、3-乙基噻吩、3,4-二乙基噻吩、3-乙氧基噻吩二聚体的电子性能。随聚合度的提高,聚合物能隙变窄。无取代噻吩二聚体的能隙为4.216 eV,重复单元长度为0.392 7 nm;乙基取代噻吩二聚体的能隙为4.733 eV,重复单元长度为0.393 9 nm;乙氧基取代噻吩二聚体的能隙为3.890 eV,重复单元长度为0.390 8 nm;双乙基取代噻吩二聚体的能隙为5.168 eV,重复单元长度为0.392 5 nm。理论变化规律与实验结果基本一致。

       

      Abstract: Three kinds of substituted polythiophenes,3-hexyl polythiophene (P3HT), 3,4-dipentyl polythiophene (P34PT) and 3-octoxyl polythiophene (P3OOT) were synthesized. The 1H-NMR spectra, UV-Vis absorption spectra and the fluorescence spectra of each polymer are also reported. Theoretical studies on the thiophene with no substituent, 3-ethyl thiophene, 3,4-diethyl thiophene and 3-ethoxyl thiophene dimers were performed with density functional theory (DFT) using Gaussian03 software package. The influences of the substituents on the electrical properties and conformations of polythiophenes are studied and the theoretical results are compared with the experimental results. The energy gaps of polymers turn narrower with the increase of polymerization degrees. The energy gaps and repeating unit lengths of nonsubstituted thiophene, 3-ethyl thiophene, 3,4-diethyl thiophene and 3-ethoxyl thiophene dimers are 4.216 eV, 0.392 7 nm, 4.733 eV, 0.393 9 nm, 3.890 eV, 0.390 8 nm, 5.168 eV, 0.392 5 nm, respectively.

       

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