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    刘家庆, 牛永鹏, 邱龙瑧, 张国兵. 哒嗪并吡咯二酮共轭聚合物半导体材料的合成及晶体管性能[J]. 功能高分子学报, 2016, 29(4): 411-417. doi: 10.14133/j.cnki.1008-9357.2016.04.006
    引用本文: 刘家庆, 牛永鹏, 邱龙瑧, 张国兵. 哒嗪并吡咯二酮共轭聚合物半导体材料的合成及晶体管性能[J]. 功能高分子学报, 2016, 29(4): 411-417. doi: 10.14133/j.cnki.1008-9357.2016.04.006
    LIU Jia-qing, NIU Yong-peng, QIU Long-zhen, ZHANG Guo-bing. Synthesis and Transistor Properties of Pyrrolo-Pyridazine-Dione Based Semiconductor Conjugated Polymer[J]. Journal of Functional Polymers, 2016, 29(4): 411-417. doi: 10.14133/j.cnki.1008-9357.2016.04.006
    Citation: LIU Jia-qing, NIU Yong-peng, QIU Long-zhen, ZHANG Guo-bing. Synthesis and Transistor Properties of Pyrrolo-Pyridazine-Dione Based Semiconductor Conjugated Polymer[J]. Journal of Functional Polymers, 2016, 29(4): 411-417. doi: 10.14133/j.cnki.1008-9357.2016.04.006

    哒嗪并吡咯二酮共轭聚合物半导体材料的合成及晶体管性能

    Synthesis and Transistor Properties of Pyrrolo-Pyridazine-Dione Based Semiconductor Conjugated Polymer

    • 摘要: 采用Stille交叉偶联反应,合成了基于6-烷基吡咯3,4-d哒嗪-5,7-二酮(PPD)与吡咯并吡咯二酮(DPP)结构单元的受体-π-受体(A1-π-A2)型共轭聚合物(PPPD-DPP)。采用热重分析仪、紫外分光光度计、电化学工作站等表征了聚合物PPPD-DPP的性能,系统地研究了聚合物的热性能、光物理性能、电化学性能及晶体管性能。结果表明:聚合物PPPD-DPP具有良好的热稳定性,热分解温度达到376℃;薄膜的最大吸收峰位于702 nm,光学能带隙为1.27 eV;有较低的最高占据分子轨道能级(HOMO,-5.23 eV)。基于PPPD-DPP的有机薄膜晶体管(OTFTs)器件在真空中显示出双极性传输特性,最高电子和空穴迁移率分别为0.030 cm2/(V·s)和0.054 cm2/(V·s),在空气中PPPD-DPP器件则表现出明显的p型传输特性,空穴迁移率提升至0.121 cm2/(V·s)。

       

      Abstract: An acceptor-π-acceptor(A1-π-A2) conjugated polymer(PPPD-DPP) based on 6-alkylpyrroles3,4-dpyridazine-5,7-dione(PPD) and diketopyrrolopyrrole(DPP) units was synthesized by Stille cross-coupling reaction.The thermal,optical, electrochemical and transistor properties of the polymer were studied by thermogravimetric analyzer,UV-Vis-NIR absorption spectrophotometer and cyclic voltammetry.The polymer PPPD-DPP showed excellent thermally stable with a decomposition temperature of 376℃ and broad absorption in the near infrared region.PPPD-DPP also had low band gap of 1.27 eV and deep highest molecular orbital energy level(HOMO) of -5.23 eV.Polymer-based organic thin film transistors(OTFTs) devices exhibited ambipolar charge transport under vacuum and yielded the mobilities of 0.030,0.054 cm2/(V·s) for electron and hole,respectively.The devices were also investigated in air and diaplayed p-type transport behavior with a hole mobility of 0.121 cm2/(V·s).

       

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